IXFH11N80 |
RFQ for IXFH11N80 Required Field |
 |
| Technical/Catalog Information | IXFH11N80 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 950 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 4200pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 155nC @ 10V |
| Package / Case | TO-247AD |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFH11N80 IXFH11N80 |
| Product | Manufacturers | Pack | D/C |
| IXFH11N80 | - | TO | - |
Typical Application |
Features |
| • DC-DC converters• Synchronous rectification• Battery chargers• Switched-mode and resonant-mode power supplies• DC choppers• AC motor control• Temperature and lighting controls• Low voltage relays | • International standard packages• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductive Switching (UIS) rated• Low package inductance - easy to drive and to protect• Fast intrinsic Rectifier |
| Symbol | Test Conditions | Maximum | Ratings |
| VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C.RG=1M |
800 800 |
V V |
| VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
| ID25 IDM IAR |
TC = 25°C pulse width limited by TJM TC = 25°C |
11N80 11 13N80 13 11N80 44 13N80 52 11N80 11 13N80 13 |
A A A A A A |
| EAR |
TC = 25°C |
30 |
mJ |
| dv/dt | IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 2 |
5 | V/ns |
| PD | TC = 25°C | 300 | W |
| TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
| TL | 1.6 mm (0.062 in.) from case for 10 s | 300 | °C |
| Md |
Mounting torque |
1.13/10 |
Nm/lb.in. |
| Weight | TO-204 = 18 g, TO-247 = 6 g |
g |
